power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 217 MG1240H-XBN2MM 1200v 40a igbt module features r ohs applications ? high level of integrationonly one power semiconductor module required for the whole drive ? low saturation voltage and positive temperature coeffcient ? fast switching and short tail current ? free wheeling diodes with fast and soft reverse recovery ? industry standard package with insulated copper base plateand soldering pins for pcb mounting ? temperature sense included ? ac motor control ? motion/servo control ? inverter and power supplies absolute maximum ratings (t j = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t j =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 55 a t c =80c 40 a i cm repetitive peak collector current t p =1ms 80 a p tot power dissipation per igbt 195 w diode v rrm repetitive reverse voltage t j =25c 1200 v i f(av) average forward current t c =25c 55 a t c =80c 40 a i frm repetitive peak forward current t p =1ms 80 a i 2 t t j =125c, t=10ms, v r =0v 300 a 2 s module characteristics (t j = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t j max max. junction temperature 150 c t j op operating temperature -40 125 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index 250 m d mounting torque recommended (m5) 2.5 5 nm weight 180 g MG1240H-XBN2MM 1 inverter sector
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 218 MG1240H-XBN2MM 1200v 40a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =1.5ma 5.0 5.8 6.5 v v ce(sat) collector - emitter i c =40a, v ge =15v, t j =25c 1.8 v saturation voltage i c =40a, v ge =15v, t j =125c 2.05 v i ices collector leakage current v ce =1200v, v ge =0v, t j =25c 0.25 ma v ce =1200v, v ge =0v, t j =125c 2 ma i ges gate leakage current v ce =0v, v ge =15v, t j =125c -400 400 na r gint integrated gate resistor 6.0 q ge gate charge v ce =600v, i c =40a , v ge =15v 0.33 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 2.5 nf c res reverse transfer capacitance 0.11 nf t d(on) turn - on delay time v cc =600v i c =40a r g =27 v ge =15v inductive load t j =25c 90 ns t j =125c 90 ns t r rise time t j =25c 30 ns t j =125c 50 ns t d(off) turn - off delay time t j =25c 420 ns t j =125c 520 ns t f fall time t j =25c 70 ns t j =125c 90 ns e on turn - on energy t j =25c 4.1 mj t j =125c 5.8 mj e off turn - off energy t j =25c 3.6 mj t j =125c 4.2 mj i sc short circuit current t psc 10s , v ge =15v; t j =125c , v cc =900v 160 a r thjc junction-to-case thermal resistance (per igbt) 0.64 k/w diode v f forward voltage i f =40a, v ge =0v, t j =25c 1.80 v i f =40a, v ge =0v, t j =125c 1.85 v t rr reverse recovery time i f =40a, v r =600v di f /dt=-400a/s t j =125c 240 ns i rrm max. reverse recovery current 35 a e rec reverse recovery energy 2.8 mj r thjcd junction-to-case thermal resistance (per diode) 1.0 k/w electrical and thermal specifcations (t j = 25c, unless otherwise specifed) 2
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 219 MG1240H-XBN2MM 1200v 40a igbt module symbol parameters test conditions min typ max unit v f forward voltage i f =40a, v ge =0v, t j =25c 1. 2 v i f =40a, v ge =0v, t j =125c 1. 15 v i r reverse leakage current v r =1600v, t j =25c 50 a v r =1600v, t j =125c 1 ma r thjcd junction-to-case thermal resistance (per diode) 1. 0 k/w diode-rectifer electrical and thermal specifcations (t j = 25c, unless otherwise specifed) 3 brake-chopper absolute maximum ratings (t j = 25c, unless otherwise specifed) diode-rectifer absolute maximum ratings (t j = 25c, unless otherwise specifed) symbol parameters test conditions values unit v rrm repetitive reverse voltage t j =25c 1600 v i f(rms) r.m.s. forward current per diode t c =80c 40 a i fsm non-repetitive surge forward current t j =45c, t=10ms, 50hz 320 a t j =45c, t=8.3ms, 60hz 350 a i 2 t t j =45c, t=10ms, 50hz 512 a 2 s t j =45c, t=8.3ms, 60hz 612 a 2 s symbol parameters test conditions values unit igbt v ces collector - emitter voltage t j =25c 1200 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 25 a t c =80c 15 a i cm repetitive peak collector current t p =1ms 30 a p tot power dissipation per igbt 105 w diode v rrm repetitive reverse voltage t j =25c 1200 v i f(av) average forward current t c =25c 25 a t c =80c 15 a i frm repetitive peak forward current t p =1ms 30 a i 2 t t j =125c, t=10ms, v r =0v 60 a 2 s
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 220 MG1240H-XBN2MM 1200v 40a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =0.5ma 5.0 5.8 6.5 v v ce(sat) collector - emitter i c =15a, v ge =15v, t j =25c 1.7 v saturation voltage i c =15a, v ge =15v, t j =125c 1.9 v i ices collector leakage current v ce =1200v, v ge =0v, t j =25c 50 a v ce =1200v, v ge =0v, t j =125c 1 ma i ges gate leakage current v ce =0v, v ge =15v, t j =125c -400 400 na r gint integrated gate resistor 0 q ge gate charge v ce =600v, i c =15a , v ge =15v 0.15 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 1.1 nf c res reverse transfer capacitance 0.05 nf t d(on) turn - on delay time v cc =600v i c =15a r g =62 v ge =15v inductive load t j =25c 90 ns t j =125c 90 ns t r rise time t j =25c 25 ns t j =125c 30 ns t d(off) turn - off delay time t j =25c 420 ns t j =125c 520 ns t f fall time t j =25c 90 ns t j =125c 120 ns e on turn - on energy t j =25c 1.4 mj t j =125c 2.0 mj e off turn - off energy t j =25c 1.0 mj t j =125c 1.2 mj i sc short circuit current t psc 10s , v ge =15v; t j =125c , v cc =900v 55 a r thjc junction-to-case thermal resistance (per igbt) 1.2 k/w diode v f forward voltage i f =15a, v ge =0v, t j =25c 1.65 v i f =15a, v ge =0v, t j =125c 1.75 v t rr reverse recovery time i f =15a, v r =600v di f /dt=-400a/s t j =125c 150 ns i rrm max. reverse recovery current 15 a e rec reverse recovery energy 0.6 mj r thjcd junction-to-case thermal resistance (per diode) 2.1 k/w brake-chopper electrical and thermal specifcations (t j = 25c, unless otherwise specifed) 4 ntc characteristics (t j = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit r 25 resistance t c =25c 5 k b 25/50 3375 k
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 221 MG1240H-XBN2MM 1200v 40a igbt module figure 1: typical output characteristics for igbt inverter i c (a) v ce ?v? t j =125c t j =25c 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v ge =15v 3.5 figure 2: typical output characteristics for igbt inverter v ge ?v? 0 20 i c (a) 40 80 t j =125c t j =25c v ce =20v 12 10 9 7 6 5 8 11 60 figure 3: typical transfer characteristics for igbt inverter 8 10 4 6 2 0 01 0 20 30 40 60 e on e off ( mj ) e on e of f r g ? ? v ce =600 v i c =40a v ge =15v t j =125c 50 figure 4: switching energy vs. gate resistor for igbt inverter 0 20 i c ?a? v ce =600v r g =27 v ge =15v t j =125c 80 60 40 e off e on 0 4 8 16 e on e off ( mj ) 12 figure 5: switching energy vs. collector current for igbt inverter figure 6: reverse biased safe operating area for igbt inverter 0 20 40 60 80 90 0 200 400 600 800 1000 1200 v ?v? 140 0 r g =27 v ge =15v t j =125c c v ce ?v? 4.0 3.5 3.0 2.5 1.5 1.0 0.5 0 i c (a) 2.04 .5 5.0 80 60 40 20 0 t j =125c ge v =11v ge v = 9v ge v =13v ge v =15v ge v =17v ge v =19v 5
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 222 MG1240H-XBN2MM 1200v 40a igbt module figure 7: diode forward characteristics for diode inverter v f ?v? 0.5 0 1.0 1.5 2.0 3.0 0 20 60 80 40 i f ( a ) t j =25c t j =125c 2.5 e rec ( mj ) r g ? ? 0 10 20 30 40 50 60 3.0 2.0 1.0 0 4.0 5.0 i f =40 a v ce =600 v t j =125c figure 8: switching energy vs. gate resistort for diode inverter e rec ( mj ) 3.0 2.0 1.0 0 20 i f (a) 60 40 0 4.0 5.0 r g =27 v ce =600v t j =125c 80 figure 9: switching energy vs. forward current diode-inverter rectangular pulse duration (seconds) z thjc ( k/w ) 0.001 0.01 0.1 1 10 0.01 0.1 1 10 diod e igbt figure 10: transient thermal impedance of diode and igbt-inverter 6 v f ?v? 0.2 0 0.4 0.6 0.8 1.6 0 20 60 80 40 i f ( a ) t j =25 c t j =125c 1.0 1.2 1.4 1.8 figure 11: diode forward characteristics diode- rectifer i f =25 a v ce =600 v t v j =125c i c (a) v ce ?v? t j =125c t j =25 c 30 20 15 10 5 0 0 0.5 1. 01 .5 2.0 2.5 3.0 v ge =15v 3.5 25 figure 12: typical output characteristics igbt- brake chopper
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 223 MG1240H-XBN2MM 1200v 40a igbt module 7 the foot pins are in gold / nic ke l coating dimensions-package h circuit diagram v f ?v? 0.4 0 0.8 1.2 1.6 i f ( a ) t j =25c t j =125c 2.0 2.4 2. 8 30 20 15 10 5 0 25 figure 13: diode forward characteristics diode - brake chopper figure 14: ntc characteristics t c ?c ? 100000 10000 100 0 100 0 20 40 60 80 100 140 120 160 r
power module ?2016 littelfuse, inc specifcations are subject to change without notice. revised:10/05/16 224 MG1240H-XBN2MM 1200v 40a igbt module part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type mg1 2 40 h - xb n2 mm voltage rating current rating assembly site 12: 1200v 40: 40a mg1240h- xbn2mm lo t number space reser ved f or qr code packing options part number marking weight packing mode m.o.q MG1240H-XBN2MM MG1240H-XBN2MM 180g bulk pack 40 8
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